Amorphous silicon and germanium films for uncooled …

The possibility of using amorphous silicon and germanium films prepared by magnetron sputtering as components in uncooled microbolometers has been analyzed experimentally and results are presented. Amorphous silicon and germanium films having activation energies of 0.135 and 0.2 eV, and resistivities of 50 and 0.4 kΩ·cm, respectively, were fabricated.

US6080998A - Amorphous silicon germanium thin film and …

An amorphous silicon germanium thin film is disclosed which contains hydrogen and germanium in concentrations of 5-10 atomic percent and 40-55 atomic percent, respectively for exhibiting the optical gap in the range of 1.30-1.40 eV. Also disclosed is a photovoltaic element incorporating the amorphous silicon germanium thin film.

Amorphous Silicon and Germanium - Big Chemical Encyclopedia

Amorphous Silicon and Germanium Structural phase transitions that occur during lithiation are typically undesirable since they often lead to slow kinetics and poor cycle life.In that respect, the electrochemically driven amorphization of silicon is advantageous since it allows lithiation to occur while b3q)assing multiple crystallographic transitions.

Amorphous Silicon and Silicon Germanium Alloy Solar Cells …

A modified very high frequency (MVHF) glow discharge technique is used to deposit amorphous silicon (a-Si) and amorphous silicon-germanium (a-SiGe) alloy solar cells at high deposition rates. High quality a-Si alloy solar cells have been obtained by using MVHF at deposition rates up to ∼10 A/s. The cells show good initial and stabilized efficiencies comparable to those …

Amorphous silicon and germanium films for uncooled microbolometers ...

The possibility of using amorphous silicon and germanium films prepared by magnetron sputtering as components in uncooled microbolometers has been analyzed experimentally and results are presented. Amorphous silicon and germanium films having activation energies of 0.135 and 0.2 eV, and resistivities of 50 and 0.4 kΩ·cm, respectively, were fabricated.

Single‐Crystal Germanium Growth on Amorphous Silicon

This work demonstrates a CMOS‐compatible method of fabricating high‐quality germanium single crystals on amorphous silicon at low temperatures of <450 °C. Grain orientation selection by geometric confinement of polycrystalline germanium films selectively grown on amorphous silicon by chemical vapor deposition is presented, where the ...

Amorphous Silicon and Germanium | Request PDF

Request PDF | Amorphous Silicon and Germanium | Properties of amorphous silicon and germanium particularly in the hydrogenated state are reviewed. Structural properties of a-Si:H and a-Ge:H ...

Band gap profiles of intrinsic amorphous silicon …

Intrinsic amorphous silicon germanium (i-a-SiGe:H) films with V, U and VU shape band gap profiles for amorphous silicon germanium (a-SiGe:H) heterojunction solar cells were fabricated. The band gap profiles of i-a-SiGe:H were prepared by varying the GeH 4 and H 2 flow rates during the deposition process. The use of i-a-SiGe:H with band gap ...

Amorphous Silicon-Germanium Films with Embedded Nanocrystals …

We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity …

N-type amorphous silicon-germanium thin films with …

Regarding the amorphous silicon-germanium (a-SiGe) alloy, it is cheap to produce by the low-frequency plasma-enhanced chemical vapor deposition (LF-PECVD) technique at low temperatures (T < 300 °C), environmentally friendly, and compatible with silicon technology . Besides, the N-type doping for a-SiGe can be performed adjusting the deposition ...

Silicon Versus Germanium - amorphous-silicon.com

With the research open to the public, commercial entities discovered that Silicon worked very well in consumer items such as portable transistor radios. Thus Silicon, which is more abundant and less expensive than Germanium became the standard material and is still being used today and for the foreseable future.

Conformal coating of amorphous silicon and germanium by …

a-Si:H is one of the most technologically important and cost-effective semiconductors and is deposited by CVD on large area planar substrates for applications such as thin film transistors, backplane displays, and solar cells. 11 11. R. A. Street, Hydrogenated Amorphous Silicon (Cambridge University Press, Cambridge, 1991). Passivation of silicon …

Silicon-Germanium Films Deposited by Low Frequency PE CVD: …

Thin films of hydrogenated amorphous silicon-germanium alloys were deposited by mercury-sensitized photochemical vapor deposition using a novel photo-CVD reactor. Thin films of a-Si/sub 1-x/Ge/sub x/:H with 0 less than or equal to x less than or equal to 1 and 1.0 less than E/sub g/ less than 1.8 eV were deposited from mixtures of silane and ...

Silicon-Germanium-Boron Ternary Amorphous Alloy - NASA/ADS

Highly conductive ternary amorphous films are prepared by thermal decomposition of silane-germane-diborane mixtures in a low-pressure furnace at 500°C. The conductivity of the amorphous silicon-germanium-boron alloy exceeds the previously obtained limit for amorphous silicon, and increases with increasing germanium content. The d.c. conductivity …

Defects in hydrogenated amorphous silicon-germanium alloys …

The sub-band-gap photomodulation (PM) spectra of a series of amorphous hydrogenated silicon-germanium alloys (a-Si1-xGex:H) were measured. For dilute alloys (x<0.1) two PM bands were observed. One band had previously been associated with the D center in unalloyed a-Si:H. The relative strength of this band decreased as the alloy parameter x ...

Amorphous silicon germanium oxide (Si[sub]xGe[sub]yO[sub]1-x …

This dissertation presents a detailed characterization of amorphous Silicon Germanium Oxide (Si-Ge-O) thin films for uncooled infrared (IR) microbolometers. Every object, whose temperature is more than absolute zero, radiates IR radiation. Uncooled infrared microbolometer can detect that IR radiation and can be used for thermal imaging. Such IR imaging cameras detect …

Impurity effects on the structure of amorphous silicon and germanium …

The stabilization of the amorphous structure in amorphous silicon film by adding Ge atoms was studied using Raman spectroscopy. Amorphous Si{sub 1−x}Ge{sub x} (x = 0.0, 0.03, 0.14, and 0.27) films were deposited on glass substrates from electron beam evaporation sources and annealed in N{sub 2} atmosphere.

Amorphous silicon, germanium, and silicon‐germanium alloy …

The first hydrogenated amorphous germanium and hydrogenated amorphous silicon‐germanium alloy field‐effect transistors with appreciable field‐effect response in n‐ and p‐channel modes were developed by reducing the dihydride content in the films. Field‐effect mobilities were derived from transistor characteristics. Hole mobilities are superior to those in …

STRUCTURAL MODELS FOR AMORPHOUS SILICON AND GERMANIUM.

OSTI.GOV Journal Article: STRUCTURAL MODELS FOR AMORPHOUS SILICON AND GERMANIUM. STRUCTURAL MODELS FOR AMORPHOUS SILICON AND GERMANIUM. Full Record; Other Related Research; Authors: Walley, P A Publication Date: Thu Jan 01 00:00:00 EST 1970 Research Org.: Chelsea Coll. of Science and Tech., London

Germanium Substrate - amorphous-silicon.com

Germanium Substrates . We have both electrical grade and optical grade germanium wafers in stock. Sizes range from < 10mm square to 150mm. Below are just some of the germanium wafers that we have in stock.

Properties of Amorphous Silicon Germanium Films and …

Amorphous silicon germanium solar cells have been extensively used for many years due to the low cost, easy fabrication, tunable bandgap and special properties. However, it is found that the properties of a-SiGe:H materials is not good as a-Si:H, and this limits the application of a-SiGe:H solar cells and brings the stability concern. ...

Silicon Versus Germanium

With the research open to the public, commercial entities discovered that Silicon worked very well in consumer items such as portable transistor radios. Thus Silicon, which is more abundant and less expensive than Germanium became the standard material and is still being used today and for the foreseable future.

Thin-film amorphous silicon germanium solar cells with p- and …

Mixed-phase hydrogenated silicon oxide (SiO x:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers.The bandgap of p-SiO x:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric field.Bandgap grading of n-SiO x:H is designed to …

Amorphous Silicon and Silicon-Germanium Thin-Film …

Amorphous Silicon and Silicon-Germanium Thin-Film Transistors Formed by Ion Implantation - Volume 297. Skip to main content Accessibility help We use cookies to distinguish you from other users and to provide you with a better experience on our websites.

Amorphous Silicon and Germanium | Semantic Scholar

Abstract Properties of amorphous silicon and germanium particularly in the hydrogenated state are reviewed. Structural properties of a-Si:H and a-Ge:H films are discussed in terms of short, medium, and long range orders. Electronic and thermomechanical properties of amorphous silicon and germanium hydrogenated films have also been demonstrated.